All access operations of synchronous SRAM are started strictly following the rising edge or falling edge of the clock signal,and the address,data input and control signal are synchronized with the clock.Compared with asynchronous SRAM,synchronous SRAM has faster access speed and higher bandwidth because it is driven by clock signal and subsequent data reading and writing are completed on the clock edge.In order to further improve the efficiency,the industry has also developed a variety of pipeline structure of synchronous SRAM,which is widely used in performance-critical scenarios.

 

The low-power synchronous SRAM model EMI504HL08WM-55I of Weiling Chuangxin represented by Yingshang adopts mature CMOS technology,with a storage capacity of 4Mbit and an organization mode of 512K×8bit.The working voltage range of synchronous SRAM is 4.5V~5.5V,and the access rate reaches 55ns,which can run stably in a wide temperature environment from-40℃to 85℃.At the same time,synchronous SRAM adopts 32-pin TSOP1 package,which is suitable for devices with extreme bandwidth requirements,such as network routers,switches,high-end graphics cards and communication base stations.

 

Weiling Chuangxin Low Power Synchronous SRAM Type

①ZBT SRAM(Zero Bus Turnaround SRAM)eliminates the waiting period of traditional SRAM when switching between reading and writing,which is extremely efficient and is often used in network processors;

②QDR SRAM(Quadruple Data Rate SRAM)has independent read-write ports,which can perform read-write operations at the same time,with outstanding bandwidth performance;

③DDR SRAM(Double Data Rate SRAM)transmits data on both the upper and lower edges of the clock.Users can choose the most matching synchronous SRAM scheme according to their own project requirements.

Please contact Yingshang Microelectronics for professional services if you need to know more about the product data or sample application of low-power synchronous SRAM.