In embedded storage devices, intelligent terminals, industrial control and other scenarios, pseudo-SRAM(PSRAM) has gradually become a cost-effective storage solution to replace traditional SRAM and SDRAM with its core advantages of compatible interface, no external refresh, low power consumption and high integration. Among them, the domestic EMI116LA16LM low-power pseudo-SRAM has become the preferred model for small and medium-capacity embedded storage scenarios due to its stable performance and simplified hardware adaptation design.
 

 

EMI116LA16LM is a domestic pseudo-SRAM memory chip with 16Mb capacity. It is built with the mature 1T+1C memory architecture and full CMOS technology, which perfectly combines the high storage density of SDRAM with the simple adaptation advantages of traditional SRAM. From the hardware structure, the internal storage granular architecture of pseudo SRAM chip is similar to that of conventional SDRAM, which ensures sufficient storage bandwidth and capacity specifications; However, the external interface is completely compatible with low-power asynchronous SRAM, which completely abandons the complicated external controller configuration and high-frequency refresh mechanism of SDRAM.
 

 

This pseudo-SRAM is equipped with built-in automatic refresh mechanism, which can complete data refresh and maintenance independently, without the need for developers to write additional refresh programs, greatly reducing the consumption of main control resources and the difficulty of development of embedded devices. At the same time, the pseudo-SRAM chip supports non-refresh working mode, and with ultra-low power operation technology, the standby and operation power consumption of the equipment is effectively reduced, and it is suitable for all kinds of low-power endurance equipment.
 

 

The EMI116LA16LM pseudo SRAM has standardized and highly adaptable hardware parameters, and is compatible with most mainstream embedded hardware platforms. The specifications are as follows:

① storage specification: the storage density of pseudo-SRAM is 16Mb, the storage organization structure is 1M×16 bits, and the 16-bit data bus is designed, which has higher data transmission efficiency and is suitable for all kinds of 16-bit processor devices.

② Working voltage: the standard wide voltage working range is 2.7V~3.3V, which is suitable for the power supply system of conventional embedded equipment and has strong power supply stability.

③ Response speed: 60ns and 70ns double speed grades are provided, which can be flexibly selected according to the operation requirements of equipment to meet the medium and high-speed data reading and writing scenarios.

④ Process and electrical characteristics: Full CMOS process, supporting TTL level compatibility and three-state output mode, facilitating device bus sharing and circuit expansion, and having strong hardware adaptability.

⑤ Packaging design: The pseudo SRAM adopts 48-FBGA precision packaging, which is small in size, suitable for high-density and miniaturized PCB layout requirements, and suitable for mass production of compact terminal equipment.
 

 

The EMI116LA16LM pseudo-SRAM is widely used in industrial control equipment, smart wearable devices, Internet of Things terminals, vehicle-mounted small control systems, embedded industrial control boards and other scenarios, which can provide stable and reliable storage support for device data cache, temporary data storage and program operation cache. As a reliable electronic component and storage technology partner. We connect the original resources, focusing on the supply and solution design of memory chips, semiconductor products, single-chip computers, Bluetooth chips and microswitches. With professional industry experience and technical support team, we can provide customers with professional assistance in product selection and R&D. If you need it, please feel free to call us.

Keywords:pseudo SRAM