The biggest difference between asynchronous static random access memory and traditional synchronous SRAM is that it does not rely on external clock signals to coordinate reading and writing actions.You can understand it as a kind of"on-call"memory:when the control signal(such as chip selection and write enable)arrives,the internal latch circuit responds immediately without waiting for the next rising edge of the clock.This architecture makes the timing design of asynchronous SRAM more intuitive.
 

 

NETSOL S6R8016WEB belongs to high-speed and low-power asynchronous SRAM series,with a total capacity of 8M bit and an internal organizational structure of 512K×16 bits.It can read and write 16-bit data in parallel at a time,which is very suitable for embedded systems that need to deal with wide data.NETSO asynchronous SRAM has a wide working voltage range from 1.65 V to 3.6V,and can be compatible with various logic levels such as 1.8V,2.5V and 3.3V..In terms of speed,NETSOL asynchronous SRAM chip S6R8016WEB provides three versions of access time options:8ns,10ns and 12ns,which can match the bus cycle of 125MHz at the highest level.The physical package adopts compact 48-ball FBGA,which occupies a small board area and is beneficial to high-density wiring.
 

 

 

Unlike DRAM,which needs to refresh the clock,the data of NETSOL asynchronous SRAM can be kept stable all the time as long as the power supply is not cut off.On this basis,S6R8016WEB further optimizes the dynamic power consumption,and automatically enters the deep low power consumption state in standby mode,which is very suitable for battery-powered devices.In practical applications,from industrial PLC to medical monitor,from GPS receiver to FPGA configuration cache,NETSOL,an 8M bit asynchronous SRAM,can provide a simple and reliable storage scheme.

Keywords:SRAM